NTTFD9D0N06HLTWG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NTTFD9D0N06HLTWG

Description:

MOSFET, POWER, 60V POWERTRENCH P

Stock:

9248

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.38

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

9A(Ta),38A(Tc)

Drain source voltage (Vdss)

60V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

13.5nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

948pF @ 30V

On resistance (maximum) for different Ids and Vgs

9 mΩ @ 10A,10V

Power - maximum

1.7W(Ta),26W(Tc)

Vgs (th) (maximum) for different Ids

2V @ 50µA

packing

TR,CT

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

12-PowerWQFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NTTFD9D0N06HLTWG.pdf

NTTFD9D0N06HLTWG（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9248,Price reference "real-time change" China/Hongkong。 NTTFD9D0N06HLTWG package/specs, Download NTTFD9D0N06HLTWG、Datasheet。